Brilliant!

Shuji Namamura and the Revolution in Lighting Technology

Bob Johnstone Central 621.32 J73b 2007

• born May 22, 1954 in Oku on the Sadamisaki Peninsula, relocated to Ozu 20 miles inland, father Tomokichi
• Tokushima University, Masters, married Hiroko February 22 1978, daughter Hitomi born August
• Nichia April 1979, 8 years spent developing compound semiconductors, epi wafers, red and infrared LEDs, all commercial failures
  • founder Nobuo Ogawa 76yo
• MOCVD Metal Organic Chemical Vapor Deposition, Gallium Nitride
  • or MOVPE, Metal Organic Vapor Phase Epitaxy
• p75 indium gallium nitride quantom well: 2 nm InGaN, 10 nm GaN, repeat, then AlGaN, then P type GaN (Mg dopant)
• p85 1968 Herbert Paul Maruska RCA Sarnoff, 1989 GaN LED by Akasaki and Amano Nagoya U,
• p103 1990 Nobuo's nephew Eiji Ogawa commands "stop work on GaN immediately"
• p109 two flow method
• p112 Jul7 1991 blue LED 50% brighter than current silicon carbide LEDs
• p114 thermal annealing removes hydrogen, P type all the way through

• p117 St. Louis conference, mentions 1000 hour lifetime, standing ovation (ZnSe less than a second)

• p118 double hetrojunction, two layers confine a third, InGaN third breakthrough June 1992
• p120 blocking layer, brilliant 100x SiC candela class LED

• p121 UCSB Herbert Kroemer, Nobel 2000, wrote Thermal Physics 1980 2nd ed with Charles Kittel

• p158 Haitz's Law: 20 fold increase in light output, 10 fold cost reduction per decade